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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3322 2SK3322-S 2SK3322-ZJ 2SK3322-ZK PACKAGE TO-220AB (MP-25) TO-262 TO-263(MP-25ZJ) TO-263(MP-25ZK)
FEATURES
* Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A) * Gate voltage rating : 30 V * Low on-state resistance : RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.8 A) * Avalanche capability ratings * Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 30 5.5 20 1.5 65 150 -55 to +150 4.0 10.7
V V A A W W C C A mJ
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V
The information contained in this document is being issued in advance of the production cycle for the product. The parameters for the product may change before final production or NEC Electronics Corporation, at its own discretion, may withdraw the product prior to its production. Not all products and/or types are availabe in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D14114EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan
The mark shows major revised points.
1999, 2000
2SK3322
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.8 A VGS = 10 V, ID = 2.8 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 150 V, ID = 2.8 A, VGS = 10 V, RG = 10
MIN.
TYP.
MAX. 100 10
UNIT
A A
V S
2.5 1.0 1.7 550 115 13 12 10 35 12
3.5
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
2.2
pF pF pF Ns ns ns ns nC nC nC V
VDD = 450 V, VGS = 10 V, ID = 5.5 A IF = 5.5 A, VGS = 0 V IF = 5.5 A, VGS = 0 V, di/dt = 50 A/s
15 4 4.4 1.0 1.6 5.3
VF(S-D) trr Qrr
s C
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 = 1 s Duty Cycle 1% ID
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L VDD PG.
D.U.T. RL VGS VGS
Wave Form
50
RG
0
10%
VGS
90%
VDD ID
90% 90%
IAS ID VDD
ID
0 10% 10%
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D14114EJ2V0DS
2SK3322
TYPICAL CHARACTERISTICS (TA = 25C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 10
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS 100 VDS = 10 V Pulsed
VGS = 10 V 8.0 V 6.0 V
ID - Drain Current - A
10
1 Tch = 125C 75C 25C -25C
5
0.1
0 0 10 20 30 40 50 VDS - Drain to Source Voltage - V
0.01 0 5 10 15 VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
4
VDS = 10 V ID = 1 mA
| yfs | - Forward Transfer Admittance - S
5
10 Tch = -25C 25C 75C 125C
3
1
2
1
0 -50
0
50
100
150
0.1 0.1
VDS = 10 V Pulsed 1 ID - Drain Current - A 10
Tch - Channel Temperature - C
RDS (on) - Drain to Source On-State Resistance -
3 Pulsed ID = 4.0 A 2 2.8 A
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3 VGS = 10 V 20 V 2
1
1
0
0
5
10
15
0 0.1
Pulsed 1 10 ID - Drain Current - A 100
VGS - Gate to Source Voltage - V
Data Sheet D14114EJ2V0DS
3
2SK3322
RDS (on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
ID = 4.0 A 3 2.8 A
ISD - Diode Forward Current - A
4
10
0 VGS = 10 V 0.1 0V
2
1 VGS = 10 V Pulsed 0 -50 0 50 100 150
0.01 0 0.5 1
Pulsed 1.5 VSD - Source to Drain Voltage - V
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 100 td(off) td(on) 10 tr tf
VGS = 0 V f = 1 MHZ
1000
Ciss
100
Coss
1
10 Crss
1 0.1
1
10
100
0.1 0.1
VDD = 150 V VGS = 10 V RG = 10
1 ID - Drain Current - A
10
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000
trr - Reverse Recovery Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16
VDS - Drain to Source Voltage - V
14 600 VDD = 450 V 300 V 150 V 12 10 VGS 8 6 200 VDS 0 0 4 8 12 4 2 0 16
1000
400
100
10 0.01
0.1
1
10
ID - Drain Current - A
QG - Gate Charge - nC
4
Data Sheet D14114EJ2V0DS
VGS - Gate to Source Voltage - V
di/dt = 50 A/S VGS = 0 V
ID = 4.0 A
2SK3322
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
80
60
40
20
0 0
Tch - Channel Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100 TC = 25C Single Pulse
ID(pulse) P W
ID - Drain Current - A
=
10
L n) (o d ite im
ID(DC)
10
0
s
10 s
1m
Po we r
10 m
s
R
DS
1
s Di ss ipa tio n Lim ite d
0.1 1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/W
10 Rth(ch-C) = 1.93C/W 1
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - sec
Data Sheet D14114EJ2V0DS
5
2SK3322
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100
SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 150 V RG = 25 VGS = 20 V 0 V IAS 4.0 A
IAS - Single Avalanche Current - A
10 IAS = 4.0 A
Energy Derating Factor - %
100 80 60 40 20 0 25
EAS
=1
0.7
mJ
1.0 RG = 25 VDD = 150 V VGS = 20 V 0 V Starting Tch = 25C 100 1m 10 m
0.1 10
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D14114EJ2V0DS
2SK3322
PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25)
3.00.3
2) TO-262
1.00.5
10.6 MAX. 10.0 TYP.
4.8 MAX.
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1 2 3
4 123
6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP.
1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3) TO-263 (MP-25ZJ)
10 TYP. 4
1.00.5
4) TO-263 (MP-25ZK)
4.8 MAX. 1.30.2
No plating 10.00.3 7.88 MIN. 4
1.350.3
4.450.2 1.30.2
8.0 TYP.
8.50.2
9.150.3
15.250.5
0.025 to 0.25
1 1.40.2 0.70.2 2.54 TYP.
2
3
5.70.4
R 0.5
TY
P.
TY P.
2.54 TYP.
0
.8R
0.50.2
2.54
0.5
0.750.2
0.2 8o
0 to
1 2 3
0.25
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate Protection Diode
Source
2.540.25
Data Sheet D14114EJ2V0DS
7
2SK3322
* The information in this document is current as of August, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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